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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
107
Application Number
16/146,238
Reference Case 1
Reference Case 2
Content
In various example methods of operation, when the controller die 102 and the memory dies 304 communicate with each other over the transmission line 308--either by the controller die 102 transmitting a signal over the transmission line 308 to the memory dies 304, or one of the memory dies 304 transmitting a signal over the transmission line 308 to the controller die 102--the ODT resistance circuit 328 is set to the low resistance level. In some embodiments, the controller die 102 and the memory die 304 may be configured to communicate with each other over the transmission line 308 at different frequencies, including a high frequency and a low frequency. The high frequency and the low frequency may be predetermined values, where, in general, the high frequency is a higher value than the low frequency. During communication over the transmission line 308, whether the ODT resistance circuit 328 is set to the high level or the low level may depend on whether signal communicated over the transmission line is communicated at the high frequency or the low frequency. For such embodiments, when the controller die 102 and the memory dies 304 communicate at the high frequency, the end die 310 has the ODT resistance circuit 328 set to the low resistance level. Alternatively, when the controller die 102 and the memory dies 304 communicate at the low frequency, the end die 310 has the ODT resistance circuit 328 set to the high resistance level.
Notes
Added by DJM 12 2021
Raw Data
<w:p w14:paraId="2F46C2D6" w14:textId="77777777" w:rsidR="00EE2B08" w:rsidRDefault="00EE2B08"><w:r><w:t xml:space="preserve">In various example methods of operation, when the controller die 102 and the memory dies 304 communicate with each other over the transmission line 308--either by the controller die 102 transmitting a signal over the transmission line 308 to the memory dies 304, or one of the memory dies 304 transmitting a signal over the transmission line 308 to the controller die 102--the ODT resistance circuit 328 is set to the low resistance level. In some embodiments, the controller die 102 and the memory die 304 may be configured to communicate with each other over the transmission line 308 at different frequencies, including a high frequency and a low frequency. The high frequency and the low frequency may be predetermined values, where, in general, the high frequency is a higher value than the low frequency. During communication over the transmission line 308, whether the ODT resistance circuit 328 is set to the high level or the low level may depend on whether signal communicated over the transmission line is communicated at the high frequency or the low frequency. For such embodiments, when the controller die 102 and the memory dies 304 communicate at the high frequency, the end die 310 has the ODT resistance circuit 328 set to the low resistance level. Alternatively, when the controller die 102 and the memory dies 304 communicate at the low frequency, the end die 310 has the ODT resistance circuit 328 set to the high resistance level. </w:t></w:r></w:p>
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