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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
92
Application Number
16/146,238
Reference Case 1
Reference Case 2
Content
The portion of the transmission line 308 that extends over the wire bond portion 320 may have an associated characteristic impedance dependent on inductance values of the wire bonds 320 and the die capacitance of the dies 304, 310 of the die group 306. FIG. 5 shows a circuit schematic diagram of the inductance L provided by the wire bonds 320 and the die capacitance C(M) of the dies 304 corresponding to the configuration of FIG. 3. In particular, a first inductor L.sub.320(1) indicates the inductance of the first wire bond 320(1), a second inductance L.sub.320(2) indicates the inductance of the second wire bond 320(2), a third inductance L.sub.320(3) indicates the inductance of the third wire bond 320(3), and an (N+1)th inductance L.sub.320(N+1) indicates the inductance of the (N+1)th wire bond 320(N+1). Additionally, a first capacitor C(M1) represents a die capacitance of the first memory die 304(1), a second capacitor C(M2) represents a die capacitance of the second memory die 304(2), and an (N+1)th capacitor C(M(N+1)) represents a die capacitance of the end die 310. As shown in FIG. 5, the inductors L.sub.320 are connected in series with each other, and the die capacitances C(M) are connected in shunt with respect to the inductors L.sub.320 and with reference to ground (GND). The associated characteristic impedance of the wire bonds 320 is dependent on or determined by the square root of the inductance L divided by the capacitance C.
Notes
Added by DJM 12 2021
Raw Data
<w:p w14:paraId="31ED30C5" w14:textId="77777777" w:rsidR="00EE2B08" w:rsidRDefault="00EE2B08"><w:r><w:t>The portion of the transmission line 308 that extends over the wire bond portion 320 may have an associated characteristic impedance dependent on inductance values of the wire bonds 320 and the die capacitance of the dies 304, 310 of the die group 306. FIG. 5 shows a circuit schematic diagram of the inductance L provided by the wire bonds 320 and the die capacitance C(M) of the dies 304 corresponding to the configuration of FIG. 3. In particular, a first inductor L.sub.320(1) indicates the inductance of the first wire bond 320(1), a second inductance L.sub.320(2) indicates the inductance of the second wire bond 320(2), a third inductance L.sub.320(3) indicates the inductance of the third wire bond 320(3), and an (N+1)</w:t></w:r><w:proofErr w:type="spellStart"/><w:r><w:t>th</w:t></w:r><w:proofErr w:type="spellEnd"/><w:r><w:t xml:space="preserve"> inductance L.sub.320(N+1) indicates the inductance of the (N+1)</w:t></w:r><w:proofErr w:type="spellStart"/><w:r><w:t>th</w:t></w:r><w:proofErr w:type="spellEnd"/><w:r><w:t xml:space="preserve"> wire bond 320(N+1). Additionally, a first capacitor C(M1) represents a die capacitance of the first memory die 304(1), a second capacitor C(M2) represents a die capacitance of the second memory die 304(2), and an (N+1)</w:t></w:r><w:proofErr w:type="spellStart"/><w:r><w:t>th</w:t></w:r><w:proofErr w:type="spellEnd"/><w:r><w:t xml:space="preserve"> capacitor </w:t></w:r><w:r><w:lastRenderedPageBreak/><w:t xml:space="preserve">C(M(N+1)) represents a die capacitance of the end die 310. As shown in FIG. 5, the inductors L.sub.320 are connected in series with each other, and the die capacitances C(M) are connected in shunt with respect to the inductors L.sub.320 and with reference to ground (GND). The associated characteristic impedance of the wire bonds 320 is dependent on or determined by the square root of the inductance L divided by the capacitance C. </w:t></w:r></w:p>
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