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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
TMC-PAT-7-PROV
FPR-PAT-1-PROV
TMC-PAT-8-PROV
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
Application Number
16/146,238
Matter Number
Paragraph Number
37
Content
FIG. 1A is a block diagram illustrating a memory system 100, such as a non-volatile memory system. The memory system 100 may include a controller 102 and memory that may be made up of a plurality of memory dies 104. As used herein, the term memory die refers to the set of memory cells (including non-volatile memory cells), and associated circuitry for managing the physical operation of those memory cells, that are formed on a single semiconductor substrate. In addition, the term die, in general, may refer to circuitry or circuit components on a single semiconductor substrate, but may or may not include memory cells to store data. The controller 102 may interface with a host system and transmit command sequences for read, program, and erase operations to the non-volatile memory dies 104. Herein, the controller 102 is referred to as a controller die 102 to identify or highlight that the circuitry of the controller 102 is configured or located on a die separate from the plurality of memory dies 104. The controller die 102 and each of the memory dies 104 may be configured or function as transceiver circuits, in that they each can transmit and receive signals. As described in further detail below, the controller die 102 and the plurality of memory dies 104 are configured to communicate with each other over a plurality of transmission lines.
Reference Case 1
Reference Case 2
Notes
Added by DJM 12 2021
Raw Data
<w:p w14:paraId="3E3A64FF" w14:textId="77777777" w:rsidR="00EE2B08" w:rsidRDefault="00EE2B08"><w:r><w:t xml:space="preserve">FIG. 1A is a block diagram illustrating a memory system 100, such as a non-volatile memory system. The memory system 100 may include a controller 102 and memory that may be made up of a plurality of memory dies 104. As used herein, the term memory die refers to the set of memory cells (including non-volatile memory cells), and associated circuitry for managing the physical operation of those memory cells, that are formed on a single semiconductor substrate. In addition, the term die, in general, may refer to circuitry or circuit components on a single semiconductor substrate, but may or may not include memory cells to store data. The controller 102 may interface with a host system and transmit command sequences for read, program, and erase operations to the non-volatile memory dies 104. Herein, the controller 102 is referred to as a controller die 102 to identify or highlight that the circuitry of the controller 102 is configured or located on a die separate from the plurality of memory dies 104. The controller die 102 and each of the memory dies 104 may be configured or function as transceiver circuits, in that they each can transmit and receive signals. As described in further detail below, the controller die 102 and the plurality of memory dies 104 are configured to communicate with each other over a plurality of transmission lines. </w:t></w:r></w:p>
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