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Like a valley search operation, a BES read scan operation is an iterative trial and error method that seeks to determine an optimal read level for one or more read levels. Similarly, to set read levels for Page 1 504, a BES read scan operation may check read level A 406, read level D 412, read level F 416, and read level K 426. However, a BES read scan operation may be optimized to determine a most likely optimal candidate read level for each read level and as the BES read scan operation tests for one read level, an emulator may determine the results of scanning Page 1 504 with the other read levels set a certain starting levels. In one embodiment, the scanning may be different from reading because threshold voltages determined are emulated and data from memory cells is not actually read, in the normal sense. Use of aspects of the disclosed solution may enable a BES read scan operation to read at the read levels but perform fewer emulated threshold voltage determinations in the scanning part of the BES read scan operation. In this manner, the BES read scan operation seeks to limit a number of iterations of read/sense operations performed on the memory cells to determine optimal read levels.

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<w:p w14:paraId="78435B54" w14:textId="77777777" w:rsidR="00B6556D" w:rsidRDefault="00B6556D"><w:r><w:t xml:space="preserve">Like a valley search operation, a BES read scan operation is an iterative trial and error method that seeks to determine an optimal read level for one or more read levels. Similarly, to set read levels for Page 1 504, a BES read scan operation may check read level A 406, read level D 412, read level F 416, and read level K 426. However, a BES read scan operation may be optimized to determine a most likely optimal candidate read level for each read level and as the BES read scan operation tests for one read level, an emulator may determine the results of scanning Page 1 504 with the other read levels set a certain starting levels. In one embodiment, the scanning may be different from reading because threshold voltages determined are emulated and data from memory cells is not actually read, in the normal sense. Use of aspects of the disclosed solution may enable a BES read scan operation to read at the read levels but perform fewer emulated threshold voltage determinations in the scanning part of the BES read scan operation. In this manner, the BES read scan operation seeks to limit a number of iterations of read/sense operations performed on the memory cells to determine optimal read levels. </w:t></w:r></w:p>