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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
153
Application Number
16869424
Reference Case 1
Reference Case 2
Content
One method a read scan operation may use is referred to as a valley search operation. "Valley search operation" refers to is a type of read scan operation configured to iteratively test or check a number of candidate read levels around a boundary for a set of memory cells within cell threshold voltage distributions for two adjacent memory states. In certain embodiments, the valley search operation may begin with a current read level or a default read level which may have been set when a storage device is manufactured. Next the valley search operation may apply a candidate read level to determine if the candidate read level resulted in fewer memory cells activating than the current read level. If so, this means that more memory cells will be identified as being programmed to a correct memory state. If not, this means that more memory cells will be erroneously identified as being to one of the adjacent memory states. The valley search operation continues to iterate in this manner changing the candidate read level with each iteration until a read level is identified that results in the fewest number set of memory cells being activated and/or a fewest number of read errors (e.g., lower bit error rate). In this manner, the valley search operation seeks a target candidate read level that provides an optimal read result. The valley search operation gets its name from the iterative process of testing candidate read levels until one is located that aligns with a "valley" between cell threshold voltage distribution curves for two adjacent memory states.
Notes
Added by DJM 12 2021
Raw Data
<w:p w14:paraId="481F76B6" w14:textId="77777777" w:rsidR="00B6556D" w:rsidRDefault="00B6556D"><w:r><w:t xml:space="preserve">One method a read scan operation may use is referred to as a valley search operation. "Valley search operation" refers to is a type of read scan operation configured to iteratively test or check a number of candidate read levels around a boundary for a set of memory cells within cell threshold voltage distributions for two adjacent memory states. In certain embodiments, the valley search operation may begin with a current read level or a default read level which may have been set when a storage device is manufactured. Next the valley search operation may apply a candidate read level to determine if the candidate read level resulted in fewer memory cells activating than the current read level. If so, this means that more memory cells will be identified as being programmed to a correct memory state. If not, this means that more memory cells will be erroneously identified as being to one of the adjacent memory states. The valley search operation continues to iterate in this manner changing the candidate read level with each iteration until a read level is identified that results in the fewest number set of memory cells being activated and/or </w:t></w:r><w:proofErr w:type="gramStart"/><w:r><w:t>a</w:t></w:r><w:proofErr w:type="gramEnd"/><w:r><w:t xml:space="preserve"> fewest number of read errors (e.g., lower bit error rate). In this manner, the valley search operation seeks a target candidate read level that provides an optimal read result. The valley search operation gets its name from the iterative process of testing candidate read levels until one is located that aligns with a "valley" between cell threshold voltage distribution curves for two adjacent memory states. </w:t></w:r></w:p>
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