Dave's PCF WIP: Paragraphs

Paragraph #2,875

Edit Paragraph

View List Paragraphs Delete

Application

Matter Number

Paragraph Number

Application Number

Reference Case 1

Reference Case 2

Content

FIG. 8B depicts another embodiment of a configuration parameter repository 802. The configuration parameter repository 802 includes a plurality of entries 808 for sets of storage cells. The sets of storage cells, in the depicted embodiment, are organized by storage media region 706, and the entries 808 correspond to storage media regions 706 from LEB 0 through LEB N. Each entry 808 further includes configuration parameters 804 for the corresponding storage media region 706. The configuration parameters 804, in the depicted embodiment, include read voltage threshold adjustments 804a-c for read level R1804a, read level R2804b, and read level R3804c, with each entry as a hexadecimal offset from default read voltage thresholds. For example, in the depicted embodiment, the read voltage threshold adjustments 804a-c vary between FAh (a hexadecimal number corresponding to decimal number −6, in a two's complement representation where “h” represents hexadecimal) and 05h (a hexadecimal number corresponding to decimal number 5).

Notes

Raw Data

<w:p><w:pPr><w:pStyle w:val="TPSBody100"/></w:pPr><w:r><w:t>FIG. 8B</w:t></w:r><w:r><w:t xml:space="preserve"> depicts another embodiment of a configuration parameter repository </w:t></w:r><w:r><w:t>802</w:t></w:r><w:r><w:t xml:space="preserve">. The configuration parameter repository </w:t></w:r><w:r><w:t>802</w:t></w:r><w:r><w:t xml:space="preserve"> includes a plurality of entries </w:t></w:r><w:r><w:t>808</w:t></w:r><w:r><w:t xml:space="preserve"> for sets of storage cells. The sets of storage cells, in the depicted embodiment, are organized by storage media region </w:t></w:r><w:r><w:t>706</w:t></w:r><w:r><w:t xml:space="preserve">, and the entries </w:t></w:r><w:r><w:t>808</w:t></w:r><w:r><w:t xml:space="preserve"> correspond to storage media regions </w:t></w:r><w:r><w:t>706</w:t></w:r><w:r><w:t xml:space="preserve"> from LEB </w:t></w:r><w:r><w:t>0</w:t></w:r><w:r><w:t xml:space="preserve"> through LEB N. Each entry </w:t></w:r><w:r><w:t>808</w:t></w:r><w:r><w:t xml:space="preserve"> further includes configuration parameters </w:t></w:r><w:r><w:t>804</w:t></w:r><w:r><w:t xml:space="preserve"> for the corresponding storage media region </w:t></w:r><w:r><w:t>706</w:t></w:r><w:r><w:t xml:space="preserve">. The configuration parameters </w:t></w:r><w:r><w:t>804</w:t></w:r><w:r><w:t xml:space="preserve">, in the depicted embodiment, include read voltage threshold adjustments </w:t></w:r><w:r><w:t>804</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t xml:space="preserve">c </w:t></w:r><w:r><w:t>for read level R</w:t></w:r><w:r><w:t>1</w:t></w:r><w:r><w:t>804</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>, read level R</w:t></w:r><w:r><w:t>2</w:t></w:r><w:r><w:t>804</w:t></w:r><w:r><w:t>b</w:t></w:r><w:r><w:t>, and read level R</w:t></w:r><w:r><w:t>3</w:t></w:r><w:r><w:t>804</w:t></w:r><w:r><w:t>c</w:t></w:r><w:r><w:t xml:space="preserve">, with each entry as a hexadecimal offset from default read voltage thresholds. For example, in the depicted embodiment, the read voltage threshold adjustments </w:t></w:r><w:r><w:t>804</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t xml:space="preserve">c </w:t></w:r><w:r><w:t>vary between FAh (a hexadecimal number corresponding to decimal number −6, in a two's complement representation where “h” represents hexadecimal) and 05h (a hexadecimal number corresponding to decimal number 5).</w:t></w:r></w:p>