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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
281
Application Number
13189402
Reference Case 1
Reference Case 2
Content
FIG. 6B is a schematic block diagram illustrating one embodiment of an array 650 of N storage elements 606 in accordance with the present invention. The array 650, in the depicted embodiment, is substantially similar to the array 600 of FIG. 6A, but with the ECC chunk 652 including data 612a in a single storage element 606a, instead of across several storage elements 606a-n. In one embodiment, ECC checkbits for the ECC chunk 652 are stored in the single storage element 606a. Because each storage element 606a-n or channel 604a-n has separate ECC checkbits, in one embodiment, the ECC module 412 uses the separate ECC checkbits to determine in which storage elements 606a-n or channels 604a-n an error has occurred, and the configuration module 352 adjusts the read voltage thresholds of the particular storage element(s) 606 determined by the ECC module 412.
Notes
Added by DJM 3 2021
Raw Data
<w:p><w:pPr><w:pStyle w:val="TPSBody100"/></w:pPr><w:r><w:t>FIG. 6B</w:t></w:r><w:r><w:t xml:space="preserve"> is a schematic block diagram illustrating one embodiment of an array </w:t></w:r><w:r><w:t>650</w:t></w:r><w:r><w:t xml:space="preserve"> of N storage elements </w:t></w:r><w:r><w:t>606</w:t></w:r><w:r><w:t xml:space="preserve"> in accordance with the present invention. The array </w:t></w:r><w:r><w:t>650</w:t></w:r><w:r><w:t xml:space="preserve">, in the depicted embodiment, is substantially similar to the array </w:t></w:r><w:r><w:t>600</w:t></w:r><w:r><w:t xml:space="preserve"> of </w:t></w:r><w:r><w:t>FIG. 6A</w:t></w:r><w:r><w:t xml:space="preserve">, but with the ECC chunk </w:t></w:r><w:r><w:t>652</w:t></w:r><w:r><w:t xml:space="preserve"> including data </w:t></w:r><w:r><w:t>612</w:t></w:r><w:r><w:t xml:space="preserve">a </w:t></w:r><w:r><w:t xml:space="preserve">in a single storage element </w:t></w:r><w:r><w:t>606</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t xml:space="preserve">, instead of across several storage elements </w:t></w:r><w:r><w:t>606</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t>n</w:t></w:r><w:r><w:t xml:space="preserve">. In one embodiment, ECC checkbits for the ECC chunk </w:t></w:r><w:r><w:t>652</w:t></w:r><w:r><w:t xml:space="preserve"> are stored in the single storage element </w:t></w:r><w:r><w:t>606</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t xml:space="preserve">. Because each storage element </w:t></w:r><w:r><w:t>606</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t xml:space="preserve">n </w:t></w:r><w:r><w:t xml:space="preserve">or channel </w:t></w:r><w:r><w:t>604</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t xml:space="preserve">n </w:t></w:r><w:r><w:t xml:space="preserve">has separate ECC checkbits, in one embodiment, the ECC module </w:t></w:r><w:r><w:t>412</w:t></w:r><w:r><w:t xml:space="preserve"> uses the separate ECC checkbits to determine in which storage elements </w:t></w:r><w:r><w:t>606</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t xml:space="preserve">n </w:t></w:r><w:r><w:t xml:space="preserve">or channels </w:t></w:r><w:r><w:t>604</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t xml:space="preserve">n </w:t></w:r><w:r><w:t xml:space="preserve">an error has occurred, and the configuration module </w:t></w:r><w:r><w:t>352</w:t></w:r><w:r><w:t xml:space="preserve"> adjusts the read voltage thresholds of the particular storage element(s) </w:t></w:r><w:r><w:t>606</w:t></w:r><w:r><w:t xml:space="preserve"> determined by the ECC module </w:t></w:r><w:r><w:t>412</w:t></w:r><w:r><w:t>.</w:t></w:r></w:p>
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