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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
227
Application Number
13189402
Reference Case 1
Reference Case 2
Content
The distribution module 414, in one embodiment, may cooperate with or be integrated with the deviation module 404. In one embodiment, the configuration module 352 uses either the ECC module 412 or the distribution module 414 to determine when adjustment of the read voltage threshold should be made or is complete. In a further embodiment, the distribution module 414 compares read biases of data sets from several dies, chips, channels, storage elements, PEBs, or other grouping of storage cells of the solid-state storage media 110 to the distribution of the known bias to determine in which grouping of storage cells an error has occurred, and the configuration module 352 adjusts one or more read voltage thresholds in a grouping of storage cells with an error.
Notes
Added by DJM 3 2021
Raw Data
<w:p><w:pPr><w:pStyle w:val="TPSBody100"/></w:pPr><w:r><w:t xml:space="preserve">The distribution module </w:t></w:r><w:r><w:t>414</w:t></w:r><w:r><w:t xml:space="preserve">, in one embodiment, may cooperate with or be integrated with the deviation module </w:t></w:r><w:r><w:t>404</w:t></w:r><w:r><w:t xml:space="preserve">. In one embodiment, the configuration module </w:t></w:r><w:r><w:t>352</w:t></w:r><w:r><w:t xml:space="preserve"> uses either the ECC module </w:t></w:r><w:r><w:t>412</w:t></w:r><w:r><w:t xml:space="preserve"> or the distribution module </w:t></w:r><w:r><w:t>414</w:t></w:r><w:r><w:t xml:space="preserve"> to determine when adjustment of the read voltage threshold should be made or is complete. In a further embodiment, the distribution module </w:t></w:r><w:r><w:t>414</w:t></w:r><w:r><w:t xml:space="preserve"> compares read biases of data sets from several dies, chips, channels, storage elements, PEBs, or other grouping of storage cells of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve"> to the distribution of the known bias to determine in which grouping of storage cells an error has occurred, and the configuration module </w:t></w:r><w:r><w:t>352</w:t></w:r><w:r><w:t xml:space="preserve"> adjusts one or more read voltage thresholds in a grouping of storage cells with an error.</w:t></w:r></w:p>
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