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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
151
Application Number
13189402
Reference Case 1
Reference Case 2
Content
The read voltage levels of storage cells, and other configuration parameters, can also shift over time, due to leakage and other disturbances of the solid-state storage media 110. The rate of leakage can also increase with the wear and age of the solid-state storage media 110. If the read voltage level of a storage cell shifts past the read voltage threshold, a data error occurs, as the value of the data read from the storage cell is different than the value of the data written to the storage cell. The configuration module 352, in one embodiment, adjusts a read voltage threshold or other configuration parameter for one or more storage cells from the solid-state storage media 110 to compensate for shifts in the read voltage levels of the storage cells. By proactively and/or dynamically adjusting read voltage thresholds, the configuration module 352 can increase the retention rate for and/or the reliability of data stored in the solid-state storage media 110 and extend the useable lifetime of the solid-state storage media 110 itself, improving the utility of the solid-state storage media 110.
Notes
Added by DJM 3 2021
Raw Data
<w:p><w:pPr><w:pStyle w:val="TPSBody100"/></w:pPr><w:r><w:t xml:space="preserve">The read voltage levels of storage cells, and other configuration parameters, can also shift over time, due to leakage and other disturbances of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve">. The rate of leakage can also increase with the wear and age of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve">. If the read voltage level of a storage cell shifts past the read voltage threshold, a data error occurs, as the value of the data read from the storage cell is different than the value of the data written to the storage cell. The configuration module </w:t></w:r><w:r><w:t>352</w:t></w:r><w:r><w:t xml:space="preserve">, in one embodiment, adjusts a read voltage threshold or other configuration parameter for one or more storage cells from the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve"> to compensate for shifts in the read voltage levels of the storage cells. By proactively and/or dynamically adjusting read voltage thresholds, the configuration module </w:t></w:r><w:r><w:t>352</w:t></w:r><w:r><w:t xml:space="preserve"> can increase the retention rate for and/or the reliability of data stored in the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve"> and extend the useable lifetime of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve"> itself, improving the utility of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t>.</w:t></w:r></w:p>
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