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In certain embodiments, instead of referring to a boundary between discrete values, a read voltage threshold comprises a range of voltages (a maximum and a minimum) that indicate a value. A voltage threshold that is a range can be adjusted by changing the boundary at either end, or at both ends, of the range. The read voltage thresholds or other configuration parameters for the solid-state storage media 110, in one embodiment, are initially set at a default level that may be defined by a manufacturer. Often such configuration parameter default levels are set to accommodate a large range of general purpose uses of the solid-state storage media 110. Advantageously, embodiments of the configuration module 352 allow the solid-state storage media 110 to be used most optimally based on more specific use characteristics. The configuration module 352, in certain embodiments, overrides the default level for one or more configuration parameters, setting the one or more configuration parameters to a different level based on storage media characteristics of the solid-state storage media 110. The configuration module 352 may set the configuration parameters to a level that decreases the amount of errors that the solid-state storage media 110 encounters when compared to the default level, to a level that increases the amount of errors that may be detected and corrected when compared to the default level, to a level that increases the number of input/output operations per second (“TOPS”) of the solid-state storage media 110 when compared to the default level, to a level that increases the usable life of the solid-state storage media 110 when compared to the default level, and/or that otherwise improves the utility of the solid-state storage media 110 when compared to the default level.

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<w:p><w:pPr><w:pStyle w:val="TPSBody100"/></w:pPr><w:r><w:t xml:space="preserve">In certain embodiments, instead of referring to a boundary between discrete values, a read voltage threshold comprises a range of voltages (a maximum and a minimum) that indicate a value. A voltage threshold that is a range can be adjusted by changing the boundary at either end, or at both ends, of the range. The read voltage thresholds or other configuration parameters for the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve">, in one embodiment, are initially set at a default level that may be defined by a manufacturer. Often such configuration parameter default levels are set to accommodate a large range of general purpose uses of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve">. Advantageously, embodiments of the configuration module </w:t></w:r><w:r><w:t>352</w:t></w:r><w:r><w:t xml:space="preserve"> allow the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve"> to be used most optimally based on more specific use characteristics. The configuration module </w:t></w:r><w:r><w:t>352</w:t></w:r><w:r><w:t xml:space="preserve">, in certain embodiments, overrides the default level for one or more configuration parameters, setting the one or more configuration parameters to a different level based on storage media characteristics of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve">. The configuration module </w:t></w:r><w:r><w:t>352</w:t></w:r><w:r><w:t xml:space="preserve"> may set the configuration parameters to a level that decreases the amount of errors that the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve"> encounters when compared to the default level, to a level that increases the amount of errors that may be detected and corrected when compared to the default level, to a level that increases the number of input/output operations per second (“TOPS”) of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve"> when compared to the default level, to a level that increases the usable life of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve"> when compared to the default level, and/or that otherwise improves the utility of the solid-state storage media </w:t></w:r><w:r><w:t>110</w:t></w:r><w:r><w:t xml:space="preserve"> when compared to the default level.</w:t></w:r></w:p>