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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
87
Application Number
13189402
Reference Case 1
Reference Case 2
Content
In one embodiment, the solid-state storage device controller 202 includes a memory controller 228 which controls a dynamic random memory array 230 and/or a static random memory array 232. As stated above, the memory controller 228 may be independent or integrated with the master controller 224. The memory controller 228 typically controls volatile memory of some type, such as DRAM (dynamic random memory array 230) and SRAM (static random memory array 232). In other examples, the memory controller 228 also controls other memory types such as electrically erasable programmable read only memory (“EEPROM”), etc. In other embodiments, the memory controller 228 controls two or more memory types and the memory controller 228 may include more than one controller. Typically, the memory controller 228 controls as much SRAM 232 as is feasible and by DRAM 230 to supplement the SRAM 232.
Notes
Added by DJM 3 2021
Raw Data
<w:p><w:pPr><w:pStyle w:val="TPSBody1"/></w:pPr><w:r><w:t xml:space="preserve">In one embodiment, the solid-state storage device controller </w:t></w:r><w:r><w:t>202</w:t></w:r><w:r><w:t xml:space="preserve"> includes a memory controller </w:t></w:r><w:r><w:t>228</w:t></w:r><w:r><w:t xml:space="preserve"> which controls a dynamic random memory array </w:t></w:r><w:r><w:t>230</w:t></w:r><w:r><w:t xml:space="preserve"> and/or a static random memory array </w:t></w:r><w:r><w:t>232</w:t></w:r><w:r><w:t xml:space="preserve">. As stated above, the memory controller </w:t></w:r><w:r><w:t>228</w:t></w:r><w:r><w:t xml:space="preserve"> may be independent or integrated with the master controller </w:t></w:r><w:r><w:t>224</w:t></w:r><w:r><w:t xml:space="preserve">. The memory controller </w:t></w:r><w:r><w:t>228</w:t></w:r><w:r><w:t xml:space="preserve"> typically controls volatile memory of some type, such as DRAM (dynamic random memory array </w:t></w:r><w:r><w:t>230</w:t></w:r><w:r><w:t xml:space="preserve">) and SRAM (static random memory array </w:t></w:r><w:r><w:t>232</w:t></w:r><w:r><w:t xml:space="preserve">). In other examples, the memory controller </w:t></w:r><w:r><w:t>228</w:t></w:r><w:r><w:t xml:space="preserve"> also controls other memory types such as electrically erasable programmable read only memory (“EEPROM”), etc. In other embodiments, the memory controller </w:t></w:r><w:r><w:t>228</w:t></w:r><w:r><w:t xml:space="preserve"> controls two or more memory types and the memory controller </w:t></w:r><w:r><w:t>228</w:t></w:r><w:r><w:t xml:space="preserve"> may include more than one controller. Typically, the memory controller </w:t></w:r><w:r><w:t>228</w:t></w:r><w:r><w:t xml:space="preserve"> controls as much SRAM </w:t></w:r><w:r><w:t>232</w:t></w:r><w:r><w:t xml:space="preserve"> as is feasible and by DRAM </w:t></w:r><w:r><w:t>230</w:t></w:r><w:r><w:t xml:space="preserve"> to supplement the SRAM </w:t></w:r><w:r><w:t>232</w:t></w:r><w:r><w:t>.</w:t></w:r></w:p>
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