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Application
2380.2.01
US-20150012794-A1
US-20150205664-A1
US-20100023800-A1
US-8737141-A1
US-10157004-B2
US10007433A1
US-9159419-B2
US-10114589-A1
US-10134728-A1
US-20200065270-A1
US-10637533-B2
US-9927986-A1
US-8380915-A1
US-9159419-A1
US-9208071-A1
US-20200098728-A1
US-10643676-A1
US-10468073-B2
US-10283200-A1
US-10461965-B1
US-20130279232-A1
US-8892980-B2
US9632727A1
US10558561A1
US20100023800A1
US7230213A1
OPT-9
FLO-2
FLO-5PROV
ONSO3175(B) - Onsemi378
ONSO3305US - Onsemi346
GTS-3DES
FLO-4
US8762658B2
US8533406B2
US9632727B2
KMN-1PROV
PAT-2
PER-8 PROV
PER-9 PROV
INS-4PROV
HAR-1
CES-16
NXT-5PROV NXT-5, 6, 7, 8
IPP-0051-US14 cross roads
FLO-7PROV
IMI-5PROV
IPP-0050-US35 nextremity
VIL-12
OPT-13
TOY-1
US10998041B1
FSP1845
US6559866B2
Placeholder App
PER-10
KBR-1 1400.2.623
PER-13PROV
PAT-3
US20030023453
RMS-1DES
SMG-1DES
FLO-5
US10318495
US10133662B2
PER-11
US20140066758
VIL-17
PER-17
JBR-1
PER-12
US11056880
US11302645
US20210407565
US11081191
PON-1PROV, 2PROV, 3PROV
PER-33
RMT-1PROV
PER-32
PER-34
MCC-1
FLO-10
PER-14
PER-19
PER-22
PER-18
PER-24
TMC-PAT-1
DAR-2
PER-23
TMC-PAT-4
PER-16
PER-4 DIV1
PER-20
PER-21
BRT-PAT-1
TMC-PAT-5
TMC-PAT-6PROV
BRT-PAT-2-PROV
71212.157.USU1
FPR-PAT-1-PROV
71212.158.USP1
RMT-1
DAR-1PROV
DAR-2PROV
PON-1PROV
PON-2PROV
PON-3PROV
PER-18PROV
TMC-1PROV
TMC-2PROV
PER-13PCT
PER-13
PER-16PROV
PER-14PROV
PER-34PROV
TMC-4PROV
TMC-3
PAS-1PROV
VEH-1
PER-29DES
TEST.001
E2E-TEST.001
TEST-001
TEST-002
TEST-003
TEST-004
ZED006
FSP1011
GAV-PAT-1-PROV
Matter Number
Paragraph Number
60
Application Number
13189402
Reference Case 1
Reference Case 2
Content
In one embodiment, the storage I/O bus 210 is comprised of one or more independent I/O buses (“IIOBa-m” comprising 210a.a-m, 210n.a-m) wherein the solid-state storage elements within each column share one of the independent I/O buses that accesses each solid-state storage element 216, 218, 220 in parallel so that all banks 214 are accessed simultaneously. For example, one channel of the storage I/O bus 210 may access a first solid-state storage element 216a, 218a, 220a of each bank 214a-n simultaneously. A second channel of the storage I/O bus 210 may access a second solid-state storage element 216b, 218b, 220b of each bank 214a-n simultaneously. Each row of solid-state storage element 216a, 216b, 216m is accessed simultaneously. In one embodiment, where solid-state storage elements 216, 218, 220 are multi-level (physically stacked), all physical levels of the solid-state storage elements 216, 218, 220 are accessed simultaneously. As used herein, “simultaneously” also includes near simultaneous access where devices are accessed at slightly different intervals to avoid switching noise. Simultaneously is used in this context to be distinguished from a sequential or serial access wherein commands and/or data are sent individually one after the other.
Notes
Added by DJM 3 2021
Raw Data
<w:p><w:pPr><w:pStyle w:val="TPSBody1"/></w:pPr><w:r><w:t xml:space="preserve">In one embodiment, the storage I/O bus </w:t></w:r><w:r><w:t>210</w:t></w:r><w:r><w:t xml:space="preserve"> is comprised of one or more independent I/O buses (“IIOBa-m” comprising </w:t></w:r><w:r><w:t>210</w:t></w:r><w:r><w:t>a.a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t>m</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>210</w:t></w:r><w:r><w:t>n.a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t>m</w:t></w:r><w:r><w:t xml:space="preserve">) wherein the solid-state storage elements within each column share one of the independent I/O buses that accesses each solid-state storage element </w:t></w:r><w:r><w:t>216</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>218</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>220</w:t></w:r><w:r><w:t xml:space="preserve"> in parallel so that all banks </w:t></w:r><w:r><w:t>214</w:t></w:r><w:r><w:t xml:space="preserve"> are accessed simultaneously. For example, one channel of the storage I/O bus </w:t></w:r><w:r><w:t>210</w:t></w:r><w:r><w:t xml:space="preserve"> may access a first solid-state storage element </w:t></w:r><w:r><w:t>216</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>218</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>220</w:t></w:r><w:r><w:t xml:space="preserve">a </w:t></w:r><w:r><w:t xml:space="preserve">of each bank </w:t></w:r><w:r><w:t>214</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t xml:space="preserve">n </w:t></w:r><w:r><w:t xml:space="preserve">simultaneously. A second channel of the storage I/O bus </w:t></w:r><w:r><w:t>210</w:t></w:r><w:r><w:t xml:space="preserve"> may access a second solid-state storage element </w:t></w:r><w:r><w:t>216</w:t></w:r><w:r><w:t>b</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>218</w:t></w:r><w:r><w:t>b</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>220</w:t></w:r><w:r><w:t xml:space="preserve">b </w:t></w:r><w:r><w:t xml:space="preserve">of each bank </w:t></w:r><w:r><w:t>214</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t>-</w:t></w:r><w:r><w:t xml:space="preserve">n </w:t></w:r><w:r><w:t xml:space="preserve">simultaneously. Each row of solid-state storage element </w:t></w:r><w:r><w:t>216</w:t></w:r><w:r><w:t>a</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>216</w:t></w:r><w:r><w:t>b</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>216</w:t></w:r><w:r><w:t xml:space="preserve">m </w:t></w:r><w:r><w:t xml:space="preserve">is accessed simultaneously. In one embodiment, where solid-state storage elements </w:t></w:r><w:r><w:t>216</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>218</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>220</w:t></w:r><w:r><w:t xml:space="preserve"> are multi-level (physically stacked), all physical levels of the solid-state storage elements </w:t></w:r><w:r><w:t>216</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>218</w:t></w:r><w:r><w:t xml:space="preserve">, </w:t></w:r><w:r><w:t>220</w:t></w:r><w:r><w:t xml:space="preserve"> are accessed simultaneously. As used herein, “simultaneously” also includes near simultaneous access where devices are accessed at slightly different intervals to avoid switching noise. Simultaneously is used in this context to be distinguished from a sequential or serial access wherein commands and/or data are sent individually one after the other.</w:t></w:r></w:p>
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