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In one embodiment, the adjustment module 306 may adjust individual media parameters separately. In another embodiment, the adjustment module 306 may adjust multiple media parameters together. For example, in a certain embodiment, the non-volatile memory media 122 may include storage cells which encode multiple bits per cell using multiple states per cell, separated by read voltage thresholds. In a further embodiment, multi-level cell (MLC) Flash memory may store two bits per cell by using four states per cell, separated by three read voltage thresholds. An error may occur if a voltage level for the cell drifts from one state past a read voltage threshold into an adjacent state. Such errors may occur due to read disturbs, program disturbs, stress-induced leakage current, or other phenomena that may affect the stored charge, or voltage level, of a Flash memory cell. If the error information suggests drifting voltage levels, the adjustment module 306 may compensate by adjusting individual read voltage thresholds, or by adjusting the three read voltage thresholds together, depending on if the amount of voltage drift is similar or different for each state.

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<w:p><w:pPr><w:pStyle w:val="TPSBody100"/></w:pPr><w:r><w:t xml:space="preserve">In one embodiment, the adjustment module </w:t></w:r><w:r><w:t>306</w:t></w:r><w:r><w:t xml:space="preserve"> may adjust individual media parameters separately. In another embodiment, the adjustment module </w:t></w:r><w:r><w:t>306</w:t></w:r><w:r><w:t xml:space="preserve"> may adjust multiple media parameters together. For example, in a certain embodiment, the non-volatile memory media </w:t></w:r><w:r><w:t>122</w:t></w:r><w:r><w:t xml:space="preserve"> may include storage cells which encode multiple bits per cell using multiple states per cell, separated by read voltage thresholds. In a further embodiment, multi-level cell (MLC) Flash memory may store two bits per cell by using four states per cell, separated by three read voltage thresholds. An error may occur if a voltage level for the cell drifts from one state past a read voltage threshold into an adjacent state. Such errors may occur due to read disturbs, program disturbs, stress-induced leakage current, or other phenomena that may affect the stored charge, or voltage level, of a Flash memory cell. If the error information suggests drifting voltage levels, the adjustment module </w:t></w:r><w:r><w:t>306</w:t></w:r><w:r><w:t xml:space="preserve"> may compensate by adjusting individual read voltage thresholds, or by adjusting the three read voltage thresholds together, depending on if the amount of voltage drift is similar or different for each state.</w:t></w:r></w:p>