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In various embodiments, a media parameter may include one or more storage thresholds, such as one or more read voltage thresholds, a bias for multiple read voltage thresholds, a resistivity threshold, a programming threshold, an erase threshold, a hardware driver level threshold, a storage controller level threshold, or the like. A read voltage threshold is a voltage level that separates discrete values stored in storage cells of the non-volatile memory media 122. Different non-volatile memory technologies may use different thresholds other than voltages to distinguish between discrete states. Phase change RAM or PRAM, for example, stores data in chalcogenide glass that has different electrical resistivity in different states. For PRAM, the adjustment module 306 may determine, set, and/or adjust resistivity thresholds that distinguish between discrete storage states. In light of this disclosure, various media parameters are clear that the adjustment module 306 may adjust. Further embodiments of adjusting media parameters are described with reference to the “configuration parameters” of U.S. patent application Ser. No. 13/719,045 entitled “Managing Non-Volatile Media” and filed Dec. 18, 2012 for Robert Wood et al., which is incorporated herein by reference in its entirety.

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<w:p><w:pPr><w:pStyle w:val="TPSBody100"/></w:pPr><w:r><w:t xml:space="preserve">In various embodiments, a media parameter may include one or more storage thresholds, such as one or more read voltage thresholds, a bias for multiple read voltage thresholds, a resistivity threshold, a programming threshold, an erase threshold, a hardware driver level threshold, a storage controller level threshold, or the like. A read voltage threshold is a voltage level that separates discrete values stored in storage cells of the non-volatile memory media </w:t></w:r><w:r><w:t>122</w:t></w:r><w:r><w:t xml:space="preserve">. Different non-volatile memory technologies may use different thresholds other than voltages to distinguish between discrete states. Phase change RAM or PRAM, for example, stores data in chalcogenide glass that has different electrical resistivity in different states. For PRAM, the adjustment module </w:t></w:r><w:r><w:t>306</w:t></w:r><w:r><w:t xml:space="preserve"> may determine, set, and/or adjust resistivity thresholds that distinguish between discrete storage states. In light of this disclosure, various media parameters are clear that the adjustment module </w:t></w:r><w:r><w:t>306</w:t></w:r><w:r><w:t xml:space="preserve"> may adjust. Further embodiments of adjusting media parameters are described with reference to the “configuration parameters” of U.S. patent application Ser. No. 13/719,045 entitled “Managing Non-Volatile Media” and filed Dec. 18, 2012 for Robert Wood et al., which is incorporated herein by reference in its entirety.</w:t></w:r></w:p>